Vertical DMOS FET is ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. The DMOS field-effect transistor (FET) is normally off when the gate-to-source voltage (VGS) is 0 V. The lateral DMOS transistor, shown in cross-section in Figure 2, has three terminals (source, gate, and drain) on the top surface and one (the body or substrate) on the bottom. A Zener diode with a breakdown voltage of approximately 40 V. Effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input.

XSST213 Datasheet PDF - Calogic LLC

TT Electronics’ range of RF power MOSFETs is one of the widest available and includes over 100 devices including D2254UK Gold metallised multi-purpose silicon DMOS RF FET. There is a device for almost any application - from low cost to ultrahigh performance, from 750mW to over 400W, and for frequencies to 1GHz. Parts for 12.5V, 28V and 50V are available in both single-ended and push-pull. Microchip’s vertical DMOS Field-Effect Transistors (FETs) are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired. 3-lead SOT-23 (Top view) See Table 3-1 for pin information.

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